Next: BSIM2 Berkeley Short Channel IGFET Model, Previous: Bipolar Junction Transistor, Up: Model and Device Parameters
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| BSIM1 - instance parameters (input-only) |
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| ic Vector of DS,GS,BS initial voltages |
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| BSIM1 - instance parameters (input-output) |
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| l Length |
| w Width |
| ad Drain area |
| as Source area |
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| pd Drain perimeter |
| ps Source perimeter |
| nrd Number of squares in drain |
| nrs Number of squares in source |
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| off Device is initially off |
| vds Initial D-S voltage |
| vgs Initial G-S voltage |
| vbs Initial B-S voltage |
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| BSIM1 - model parameters (input-only) |
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| nmos Flag to indicate NMOS |
| pmos Flag to indicate PMOS |
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| BSIM1 - model parameters (input-output) |
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| vfb Flat band voltage |
|lvfb Length dependence of vfb |
| wvfb Width dependence of vfb |
| phi Strong inversion surface potential |
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| lphi Length dependence of phi |
| wphi Width dependence of phi |
| k1 Bulk effect coefficient 1 |
| lk1 Length dependence of k1 |
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| wk1 Width dependence of k1 |
| k2 Bulk effect coefficient 2 |
| lk2 Length dependence of k2 |
| wk2 Width dependence of k2 |
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| eta VDS dependence of threshold voltage |
| leta Length dependence of eta |
| weta Width dependence of eta |
| x2e VBS dependence of eta |
| lx2e Length dependence of x2e |
| continued |
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| BSIM1 - model input-output parameters - continued |
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|wx2e Width dependence of x2e |
|x3e VDS dependence of eta |
|lx3e Length dependence of x3e |
|wx3e Width dependence of x3e |
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|dl Channel length reduction in um |
|dw Channel width reduction in um |
|muz Zero field mobility at VDS=0 VGS=VTH |
|x2mz VBS dependence of muz |
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|lx2mz Length dependence of x2mz |
|wx2mz Width dependence of x2mz |
mus Mobility at VDS=VDD VGS=VTH, channel length modulation
|lmus Length dependence of mus |
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|wmus Width dependence of mus |
|x2ms VBS dependence of mus |
|lx2ms Length dependence of x2ms |
|wx2ms Width dependence of x2ms |
|--------------------------------------------------------------------+
|x3ms VDS dependence of mus |
|lx3ms Length dependence of x3ms |
|wx3ms Width dependence of x3ms |
|u0 VGS dependence of mobility |
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|lu0 Length dependence of u0 |
|wu0 Width dependence of u0 |
|x2u0 VBS dependence of u0 |
|lx2u0 Length dependence of x2u0 |
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|wx2u0 Width dependence of x2u0 |
|u1 VDS dependece of mobility, velocity saturation |
|lu1 Length dependence of u1 |
|wu1 Width dependence of u1 |
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|x2u1 VBS dependence of u1 |
|lx2u1 Length dependence of x2u1 |
|wx2u1 Width dependence of x2u1 |
|x3u1 VDS dependence of u1 |
|--------------------------------------------------------------------+
|lx3u1 Length dependence of x3u1 |
|wx3u1 Width dependence of x3u1 |
|n0 Subthreshold slope |
ln0 Length dependence of n0
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|wn0 Width dependence of n0 |
|nb VBS dependence of subthreshold slope |
|lnb Length dependence of nb |
|wnb Width dependence of nb |
|--------------------------------------------------------------------+
|nd VDS dependence of subthreshold slope |
|lnd Length dependence of nd |
|wnd Width dependence of nd |
| continued |
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| BSIM1 - model input-output parameters - continued |
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|tox Gate oxide thickness in um |
|temp Temperature in degree Celsius |
|vdd Supply voltage to specify mus |
|cgso Gate source overlap capacitance per unit channel width(m) |
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|cgdo Gate drain overlap capacitance per unit channel width(m) |
|cgbo Gate bulk overlap capacitance per unit channel length(m) |
|xpart Flag for channel charge partitioning |
|rsh Source drain diffusion sheet resistance in ohm per square |
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|js Source drain junction saturation current per unit area |
|pb Source drain junction built in potential |
|mj Source drain bottom junction capacitance grading coefficient
|pbsw Source drain side junction capacitance built in potential |
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|mjsw Source drain side junction capacitance grading coefficient |
|cj Source drain bottom junction capacitance per unit area |
|cjsw Source drain side junction capacitance per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
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