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| BSIM2 - instance parameters (input-only) |
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| ic Vector of DS,GS,BS initial voltages |
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| BSIM2 - instance parameters (input-output) |
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| l Length |
| w Width |
| ad Drain area |
| as Source area |
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| pd Drain perimeter |
| ps Source perimeter |
| nrd Number of squares in drain |
| nrs Number of squares in source |
|-----------------------------------------------------------+
| off Device is initially off |
| vds Initial D-S voltage |
| vgs Initial G-S voltage |
| vbs Initial B-S voltage |
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| BSIM2 - model parameters (input-only) |
|-----------------------------------------------------------+
| nmos Flag to indicate NMOS |
| pmos Flag to indicate PMOS |
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| BSIM2 - model parameters (input-output) |
|-----------------------------------------------------------+
|vfb Flat band voltage |
|lvfb Length dependence of vfb |
|wvfb Width dependence of vfb |
|phi Strong inversion surface potential |
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|lphi Length dependence of phi |
|wphi Width dependence of phi |
|k1 Bulk effect coefficient 1 |
|lk1 Length dependence of k1 |
|-----------------------------------------------------------+
|wk1 Width dependence of k1 |
|k2 Bulk effect coefficient 2 |
|lk2 Length dependence of k2 |
|wk2 Width dependence of k2 |
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|eta0 VDS dependence of threshold voltage at VDD=0
|leta0 Length dependence of eta0 |
|weta0 Width dependence of eta0 |
|etab VBS dependence of eta |
|-----------------------------------------------------------+
|letab Length dependence of etab |
|wetab Width dependence of etab |
|dl Channel length reduction in um |
|dw Channel width reduction in um |
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|mu0 Low-field mobility, at VDS=0 VGS=VTH |
|mu0b VBS dependence of low-field mobility |
|lmu0b Length dependence of mu0b |
|wmu0b Width dependence of mu0b |
|-----------------------------------------------------------+
|mus0 Mobility at VDS=VDD VGS=VTH |
|lmus0 Length dependence of mus0 |
|wmus0 Width dependence of mus |
|musb VBS dependence of mus |
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|lmusb Length dependence of musb |
|wmusb Width dependence of musb |
|mu20 VDS dependence of mu in tanh term |
|lmu20 Length dependence of mu20 |
|-----------------------------------------------------------+
|wmu20 Width dependence of mu20 |
|mu2b VBS dependence of mu2 |
|lmu2b Length dependence of mu2b |
|wmu2b Width dependence of mu2b |
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|mu2g VGS dependence of mu2 |
| continued |
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| BSIM2 - model input-output parameters - continued
|-----------------------------------------------------------+
| lmu2g Length dependence of mu2g |
| wmu2g Width dependence of mu2g |
| mu30 VDS dependence of mu in linear term |
| lmu30 Length dependence of mu30 |
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| wmu30 Width dependence of mu30 |
| mu3b VBS dependence of mu3 |
| lmu3b Length dependence of mu3b |
| wmu3b Width dependence of mu3b |
|-----------------------------------------------------------+
| mu3g VGS dependence of mu3 |
| lmu3g Length dependence of mu3g |
| wmu3g Width dependence of mu3g |
| mu40 VDS dependence of mu in linear term |
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| lmu40 Length dependence of mu40 |
| wmu40 Width dependence of mu40 |
| mu4b VBS dependence of mu4 |
| lmu4b Length dependence of mu4b |
|-----------------------------------------------------------+
| wmu4b Width dependence of mu4b |
| mu4g VGS dependence of mu4 |
| lmu4g Length dependence of mu4g |
| wmu4g Width dependence of mu4g |
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| ua0 Linear VGS dependence of mobility |
| lua0 Length dependence of ua0 |
| wua0 Width dependence of ua0 |
| uab VBS dependence of ua |
|-----------------------------------------------------------+
| luab Length dependence of uab |
| wuab Width dependence of uab |
| ub0 Quadratic VGS dependence of mobility |
| lub0 Length dependence of ub0 |
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| wub0 Width dependence of ub0 |
| ubb VBS dependence of ub |
| lubb Length dependence of ubb |
| wubb Width dependence of ubb |
|-----------------------------------------------------------+
| u10 VDS dependence of mobility |
| lu10 Length dependence of u10 |
wu10 Width dependence of u100 |
| u1b VBS dependence of u1 |
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| lu1b Length dependence of u1b |
| wu1b Width dependence of u1b |
| u1d VDS dependence of u1 |
| lu1d Length dependence of u1d |
|-----------------------------------------------------------+
| wu1d Width dependence of u1d |
| n0 Subthreshold slope at VDS=0 VBS=0 |
| ln0 Length dependence of n0 |
| continued |
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| BSIM2 - model input-output parameters - continued |
|--------------------------------------------------------------+
|wn0 Width dependence of n0 |
|nb VBS dependence of n |
|lnb Length dependence of nb |
|wnb Width dependence of nb |
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|nd VDS dependence of n |
|lnd Length dependence of nd |
|wnd Width dependence of nd |
|vof0 Threshold voltage offset AT VDS=0 VBS=0 |
|--------------------------------------------------------------+
|lvof0 Length dependence of vof0 |
|wvof0 Width dependence of vof0 |
|vofb VBS dependence of vof |
|lvofb Length dependence of vofb |
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|wvofb Width dependence of vofb |
|vofd VDS dependence of vof |
|lvofd Length dependence of vofd |
|wvofd Width dependence of vofd |
|--------------------------------------------------------------+
|ai0 Pre-factor of hot-electron effect. |
|lai0 Length dependence of ai0 |
|wai0 Width dependence of ai0 |
|aib VBS dependence of ai |
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|laib Length dependence of aib |
|waib Width dependence of aib |
|bi0 Exponential factor of hot-electron effect. |
|lbi0 Length dependence of bi0 |
|--------------------------------------------------------------+
|wbi0 Width dependence of bi0 |
|bib VBS dependence of bi |
|lbib Length dependence of bib |
|wbib Width dependence of bib |
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|vghigh Upper bound of the cubic spline function. |
|lvghigh Length dependence of vghigh |
|wvghigh Width dependence of vghigh |
|vglow Lower bound of the cubic spline function. |
|--------------------------------------------------------------+
|lvglow Length dependence of vglow |
|wvglow Width dependence of vglow |
|tox Gate oxide thickness in um |
|temp Temperature in degree Celcius |
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|vdd Maximum Vds |
|vgg Maximum Vgs |
|vbb Maximum Vbs |
|cgso Gate source overlap capacitance per unit |
| channel width(m) |
|--------------------------------------------------------------+
|cgdo Gate drain overlap capacitance |
| per unit channel width(m) |
|cgbo Gate bulk overlap capacitance |
| per unit channel length(m) |
|xpart Flag for channel charge partitioning |
| continued |
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| BSIM2 - model input-output parameters |
|--------------------------------------------------------------+
|rsh Source drain diffusion sheet resistance |
| in ohm per square |
|js Source drain junction saturation current |
| per unit area |
|pb Source drain junction built in potential |
|mj Source drain bottom junction capacitance |
| grading coefficient |
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|pbsw Source drain side junction capacitance |
| built in potential |
|mjsw Source drain side junction capacitance |
| grading coefficient |
|cj Source drain bottom junction capacitance |
| per unit area |
|cjsw Source drain side junction capacitance |
| per unit area |
|wdf Default width of source drain diffusion in um |
|dell Length reduction of source drain diffusion |
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