Next: BSIM1 Berkeley Short Channel IGFET Model, Previous: Arbitrary Source, Up: Model and Device Parameters
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| BJT - instance parameters (input-only) |
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| ic Initial condition vector |
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| BJT - instance parameters (input-output) |
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| off Device initially off |
| icvbe Initial B-E voltage |
| icvce Initial C-E voltage |
| area Area factor |
| temp instance temperature |
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| BJT - instance parameters (output-only) |
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| colnode Number of collector node |
| basenode Number of base node |
| emitnode Number of emitter node |
| substnode Number of substrate node |
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| colprimenode Internal collector node |
| baseprimenode Internal base node |
| emitprimenode Internal emitter node |
| ic Current at collector node |
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ib Current at base node
| ie Emitter current |
| is Substrate current |
| vbe B-E voltage |
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| vbc B-C voltage |
| gm Small signal transconductance |
| gpi Small signal input conductance - pi |
| gmu Small signal conductance - mu |
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| gx Conductance from base to internal base |
| go Small signal output conductance |
| geqcb d(Ibe)/d(Vbc) |
| gccs Internal C-S cap. equiv. cond. |
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| geqbx Internal C-B-base cap. equiv. cond. |
| cpi Internal base to emitter capactance |
| cmu Internal base to collector capactiance |
| cbx Base to collector capacitance |
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| ccs Collector to substrate capacitance |
| cqbe Cap. due to charge storage in B-E jct. |
| cqbc Cap. due to charge storage in B-C jct. |
| cqcs Cap. due to charge storage in C-S jct. |
| cqbx Cap. due to charge storage in B-X jct. |
| continued |
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| BJT - instance output-only parameters - continued
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| cexbc Total Capacitance in B-X junction |
| qbe Charge storage B-E junction |
| qbc Charge storage B-C junction |
| qcs Charge storage C-S junction |
| qbx Charge storage B-X junction |
| p Power dissipation |
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| BJT - model parameters (input-output) |
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| npn NPN type device |
| pnp PNP type device |
| is Saturation Current |
| bf Ideal forward beta |
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| nf Forward emission coefficient |
| vaf Forward Early voltage |
| va (null) |
| ikf Forward beta roll-off corner current |
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| ik (null) |
| ise B-E leakage saturation current |
| ne B-E leakage emission coefficient |
| br Ideal reverse beta |
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| nr Reverse emission coefficient |
| var Reverse Early voltage |
| vb (null) |
| ikr reverse beta roll-off corner current |
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| isc B-C leakage saturation current |
| nc B-C leakage emission coefficient |
| rb Zero bias base resistance |
| irb Current for base resistance=(rb+rbm)/2 |
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| rbm Minimum base resistance |
| re Emitter resistance |
| rc Collector resistance |
| cje Zero bias B-E depletion capacitance |
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| vje B-E built in potential |
| pe (null) |
| mje B-E junction grading coefficient |
| me (null) |
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| tf Ideal forward transit time |
| xtf Coefficient for bias dependence of TF |
| vtf Voltage giving VBC dependence of TF |
| itf High current dependence of TF |
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| ptf Excess phase |
| cjc Zero bias B-C depletion capacitance |
| vjc B-C built in potential |
| continued |
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| BJT - model input-output parameters - continued
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| pc (null) |
| mjc B-C junction grading coefficient |
| mc (null) |
| xcjc Fraction of B-C cap to internal base |
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| tr Ideal reverse transit time |
| cjs Zero bias C-S capacitance |
| ccs Zero bias C-S capacitance |
| vjs Substrate junction built in potential |
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| ps (null) |
| mjs Substrate junction grading coefficient |
| ms (null) |
| xtb Forward and reverse beta temp. exp. |
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| eg Energy gap for IS temp. dependency |
| xti Temp. exponent for IS |
| fc Forward bias junction fit parameter |
| tnom Parameter measurement temperature |
| kf Flicker Noise Coefficient |
| af Flicker Noise Exponent |
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| BJT - model parameters (output-only) |
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| type NPN or PNP |
| invearlyvoltf Inverse early voltage:forward |
| invearlyvoltr Inverse early voltage:reverse |
| invrollofff Inverse roll off - forward |
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| invrolloffr Inverse roll off - reverse |
| collectorconduct Collector conductance |
| emitterconduct Emitter conductance |
| transtimevbcfact Transit time VBC factor |
| excessphasefactor Excess phase fact. |
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