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| JFET - instance parameters (input-output) |
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| off Device initially off |
| ic Initial VDS,VGS vector |
| area Area factor |
| ic-vds Initial D-S voltage |
| ic-vgs Initial G-S volrage |
| temp Instance temperature |
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| JFET - instance parameters (output-only) |
|--------------------------------------------------------------+
|drain-node Number of drain node |
|gate-node Number of gate node |
|source-node Number of source node |
|drain-prime-node Internal drain node |
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|source-prime-nodeInternal source node |
|vgs Voltage G-S |
|vgd Voltage G-D |
|ig Current at gate node |
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|id Current at drain node |
|is Source current |
|igd Current G-D |
|gm Transconductance |
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|gds Conductance D-S |
|ggs Conductance G-S |
|ggd Conductance G-D |
|qgs Charge storage G-S junction |
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|qgd Charge storage G-D junction |
cqgs Capacitance due to charge storage G-S junction
| |
cqgd Capacitance due to charge storage G-D junction
|p Power dissipated by the JFET |
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| JFET - model parameters (input-output) |
|-----------------------------------------------------------+
| njf N type JFET model |
| pjf P type JFET model |
| vt0 Threshold voltage |
| vto (null) |
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| beta Transconductance parameter |
| lambda Channel length modulation param. |
| rd Drain ohmic resistance |
| rs Source ohmic resistance |
| cgs G-S junction capacitance |
| continued |
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| JFET - model input-output parameters - continued
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| cgd G-D junction cap |
| pb Gate junction potential |
| is Gate junction saturation current |
| fc Forward bias junction fit param. |
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| b Doping tail parameter |
| tnom parameter measurement temperature |
| kf Flicker Noise Coefficient |
| af Flicker Noise Exponent |
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| JFET - model parameters (output-only) |
|-----------------------------------------------------------+
| type N-type or P-type JFET model |
| gd Drain conductance |
| gs Source conductance |
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